2016/08-2022/01，Tsinghua University，Department of Mechanical Engineering，Ph.D
2020/01-2021/01，Northeastern University，Center for High-rate Nanomanufacturing，Visiting Scholar
2012/08-2016/06，China Agricultural University，College of Engineering，B.S
2024/06-Present，Tsinghua University，Department of Mechanical Engineering，Research Associate Professor
2022/05-2024/05，Huawei Digital Technology Co., Ltd & Tsinghua University，Postdoctoral Research Associate
Micro/Nano Fabrication Tribology,
Nano/Atomic-Precision Surface Manufacturing,
Chemical Mechanical Polishing(CMP) and post-CMP Cleaning for Integrated Circuits.
1. Zhang L, Lu X, Busnaina A A. The role of carboxylic acids on nanoparticle removal in post CMP cleaning process for cobalt interconnects. Materials Chemistry and Physics, 2022, 275:125199.
2. Zhang L, Wang T, Lu X. Potassium persulfate as an oxidizer in chemical mechanical polishing slurries relevant for copper interconnects with cobalt barrier layers. Journal of Materials Science, 2020, 55: 8992-9002.
3. Zhang L, Lu X, Busnaina A A. Non-contact Post-CMP megasonic cleaning of cobalt wafers. Materials Science in Semiconductor Processing, 2023, 156: 107278.
4. Zhang L, Wang T, Lu X. Research on weakly alkaline bulk slurries relevant to chemical mechanical polishing for cobalt interconnects. The International Journal of Advanced Manufacturing Technology, 2023, 125(9-10): 4549-4559.
5. Zhang L, Wang T, Wang S, Lu X. The role of dipotassium ethylenediaminetetraacetic acid and potassium oleate on chemical mechanical planarization relevant to heterogeneous materials of cobalt interconnects. Materials Science in Semiconductor Processing, 2023, 160: 107410.
6. Zhang L, Wang T, Wang S, Lu X. Polishing mechanisms of various surfactants in chemical mechanical polishing relevant to cobalt interconnects. The International Journal of Advanced Manufacturing Technology, 2023.
7. Zhang L, Xie L, Lu X. Enhancing ceria slurry performance for shallow trench isolation chemical mechanical polishing through non-ionic surfactant addition. The International Journal of Advanced Manufacturing Technology, 2023.
8. Zhang L, Wang T, Lu X. The effect of citric acid based cleaning solution on particle adhesion and removal during post-Cu CMP cleaning. Microelectronic Engineering, 2019, 216:111090.
9. Zhang L, Wang T, Xie S, Lu X. The role of diethanolamine on chemical mechanical polishing in alkaline glycine-based slurries for cobalt interconnects. ECS Journal of Solid State Science and Technology, 12(4): 044006.
10. Zhang L, Wang S, Wang T, Lu X. Roles of phthalic acid and oleic acid on chemical mechanical polishing in alkaline slurries for cobalt interconnects. ECS Journal of Solid State Science and Technology, 2023, 12: 074007.
11. Zhang L, Xie L, Lu X. Effect of Ionic Surfactants on Shallow Trench Isolation for Chemical Mechanical Polishing Using Ceria-based Slurries. Cogent Engineering , 2023.
12. Zhang L, Wang T, Nan J, Lu X. Developing an Efficient Forward Design Method for Co Post-CMP Cleaning Formulations Based on Nanoparticle Removal Mechanisms. ACS Electronic Materials, 2024.
2023 Best Young Engineer First Prize (Conference of Science & Technology for Integrated Circuits)
2022 Best Student Award (Conference of Science & Technology for Integrated Circuits)
