Ph.D., Department of Engineering, Cambridge University, 2009
M.S., School of Physics, Peking University, 2004
B.S., Department of Physics, Peking University, 2001
Department of Mechanical Engineering (DME)，Tsinghua Univeristy，China, Associate Professor, 2014-Present, full time
Department of Precision Instruments and Mechanology, Tsinghua University, China, Assistant Professor, 2009-2013, full time
Hard mechanism of the films like (Ti,Al,Si,N) related materials
Size effect study of the elastic-plastic of MX2 (M=Mo,W; X=S,Se) atomically thin film
Ab-initio simulations for oxides metal-oxide interface and metal-oxide-silicon stacks
Simulations for materials hard modeling
[1] D. Liu, Y. Guo, L. Lin, and J. Robertson，“Sulfur vacancies in monolayer MoS2 and its electrical contacts”, Applied Physics Letters, 103, 2183113, 2013;
[2] D. Liu, Y. Guo, L. Lin, and J. Robertson，“First-principles calculations of the electronic structure and defects of Al2O3”, Journal of Applied Physics, 114(8), 083704, 2013;
[3] N.Mao, Y.Chen, D.Liu , J.Zhang, and L.Xie, “Solvatochromic Effect on the Photoluminescence of MoS2 Monolayers”, Small, 9(8), 1312-1315, 2013;
[4] D.Liu, H.Wang, K.Su, Q.Tan, B.Bai, and T.Shao, “Laser Induced Twin-Groove Surface Texturing, Based on Optical Fiber Modulation”，Laser Physics, 23(5), 056005, 2013;
[5] D.Liu, J.Liu, H.Wang, K.Su and T.Shao, Science China-Technological Sciences, 56(12), 3012, 2013;
[6] D.Liu, J.Liu, H.Wang, and T.Shao , “Laser Etching of Groove Structures with Micro-Optical Fiber Enhanced Irradiation”,Nanoscale Research Letters, 7, 318, 2012;
[7] D.Liu, S.J.Clark, J.Robertson, “Oxygen vacancy levels and electron transport in Al2O3”,Applied Physics Letters，96,( 032905) 2010.
[8] D.Liu, J.Robertson, “Oxygen vacancy levels and interfaces of Al2O3” Microelectronic Engineering,86(1668) 2009 .
